In0.53Ga0.47As/AlAs resonant tunneling diodes with peak current densities in excess of 450 kA/cm2
In0.53Ga0.47As/AlAs resonant tunneling diodes with peak current densities in excess of 450 kA/cm2
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In0.53Ga0.47As/AlAs 谐振隧道二极管，峰值电流密度超过 450 kA/cm2
DOI：
10.1063/1.346226
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发表时间：
1990
影响因子：
3.2
通讯作者：
C. Fonstad
中科院分区：
文献类型：
--
作者：
T. Broekaert;C. Fonstad
通过在In0.53Ga0.47As边界区域内使用非常薄的AlAs势垒和In0.53Ga0.47As威尔斯，在InP基InGaAlAs材料系统中获得了具有高峰谷电流比的极高峰电流密度共振隧穿二极管。具有4 ML AlAs势垒和16 ML In0.53Ga0.47As势垒的二极管获得了460 kA/cm 2的峰值电流密度。这些器械的室温峰谷电流比为4。从峰值电流密度对势垒厚度的依赖性的测量中，发现In 0.53Ga 0.47As上的赝晶AlAs势垒的强度m*V的值为0.07±0.01 eV。
Extremely high peak current density resonant tunneling diodes, with high peak‐to‐valley current ratios, have been obtained in the InP‐based InGaAlAs material system by using very thin AlAs barriers and In0.53Ga0.47As wells, within In0.53Ga0.47As bounding regions. A peak current density of 460 kA/cm2 has been obtained for diodes with 4‐ML AlAs barriers and a 16‐ML In0.53Ga0.47As well. The room‐temperature peak‐to‐valley current ratio of these devices is 4. From a measurement of the dependence of the peak current density on barrier thickness, a value for the strength, m*V, of the pseudomorphic AlAs barrier on In0.53Ga0.47As is found to be 0.07±0.01 eV.