Electrochemical processing of Cu and Ni nanowire arrays
Electrochemical processing of Cu and Ni nanowire arrays
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DOI：
10.1016/j.jelechem.2005.07.023
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发表时间：
2005-10-15
影响因子：
4.5
通讯作者：
Kikuchi, S
中科院分区：
文献类型：
--
作者：
Motoyama, M;Fukunaka, Y;Kikuchi, S
通过恒电位电沉积法在径迹蚀刻的聚碳酸酯（PC）膜中制备了铜和镍纳米线阵列。PC膜中纳米级圆柱形孔的直径在15到200纳米之间变化。在铜和镍纳米线生长过程中，瞬态电流变化分为四个阶段。用场发射扫描电子显微镜（FE - SEM）和透射电子显微镜（TEM）对纳米线进行了观察。纳米线的长径比达到50到400。纳米线的直径沿长度方向并非完全均匀。在直径为15纳米的纳米线表面观察到一种滚花状的形态。这种形态变化不受过电位控制，而是归因于用重离子径迹蚀刻的PC膜中纳米孔壁的原始形状。（c）2005爱思唯尔有限公司。保留所有权利。
Cu and Ni nanowire arrays were fabricated by potentiostatic electrodeposition into track-etched polycarbonate (PC) membranes. The diameters of nano-sized cylindrical pores in PC membranes varied from 15 to 200 nm. The transient current variation was divided into four stages during the growth of Cu and Ni nanowires. The nanowires were observed with FE-SEM and TEM. The aspect ratio of nanowire reached from 50 to 400. The diameters of nanowires were not perfectly uniform along the length. A knurled type of morphology was observed on the surface of nanowire with 15 nm diameter. Such a morphological variation was not governed by the overpotential, but attributed to the original shape of nanopore wall in PC membranes track-etched with heavy ions. (c) 2005 Elsevier B.V. All rights reserved.