Performance prediction for multiple-threshold 7nm-FinFET-based circuits operating in multiple voltage regimes using a cross-layer simulation framework
Performance prediction for multiple-threshold 7nm-FinFET-based circuits operating in multiple voltage regimes using a cross-layer simulation framework
复制标题
使用跨层仿真框架对在多个电压范围下运行的基于多阈值 7nm-FinFET 的电路进行性能预测
DOI：
--
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Massoud Pedram
中科院分区：
文献类型：
--
作者：
Shuang Chen;Yanzhi Wang;Xue Lin;Q. Xie;Massoud Pedram
由于其许多吸引人的属性，FinFets成为CMOS Process Technology节点低于20nm的首选设备。本文是第一项研究通过跨层设计和仿真框架，通过7NM FinFET技术在接近阈值制度及以上运行的CMOS电路的有效性。使用Sentaurus TCAD设计了三种具有不同阈值电压的FinFET设备，以适应同一库中同时构建高速单元和低功率单元的需求。使用电流源建模技术以高精度提取紧凑和与香料兼容的设备模型。产生了两个不同（近阈值）电源电压的标准单元格库。电路合成在广泛的基准测试中进行，以将性能与最先进的平面CMOS对应物进行比较。仿真结果证明了从速度和能源效率的这两个方面的基于7NM FinFET电路的好处。
Because of their many attractive attributes, FinFETs are emerging as the device of choice for CMOS process technology nodes below 20nm. This paper is the first work that investigates the effectiveness of building CMOS circuits operating in the near-threshold regime and above with 7nm FinFET technology through a cross-layer design and simulation framework. Three types of FinFET devices with different threshold voltages are designed using Sentaurus TCAD to accommodate the need for constructing both high-speed cells and low-power cells in the same library. Compact and SPICE-compatible device models are extracted with high accuracy using current source modeling techniques. Standard cell libraries with two different (near-and super-threshold) supply voltages are generated. Circuit syntheses are performed on extensive benchmarks to compare the performance with the state-of-the-art planar CMOS counterparts. Simulation results demonstrate the benefit of 7nm FinFET-based circuits from both aspects of speed and energy efficiency.