REACTIVE-SPUTTER-DEPOSITED TIN FILMS ON GLASS SUBSTRATES
REACTIVE-SPUTTER-DEPOSITED TIN FILMS ON GLASS SUBSTRATES
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DOI：
10.1016/0040-6090(91)90225-m
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发表时间：
1991-03-10
期刊：
影响因子：
2.1
通讯作者：
CROITORU, N
中科院分区：
文献类型：
--
作者：
PELLEG, J;ZEVIN, LZ;CROITORU, N
用X射线衍射分析方法研究了玻璃基片上溅射沉积TiN薄膜。 基于（200）和（220）峰确定的晶格参数小于基于（111）峰确定的晶格参数。 在退火过程中观察到晶格常数随温度的升高而减小。 薄膜具有择优取向。 应变和表面能的基础上讨论了一个特定的优选取向的趋势。 在低衬底温度和/或在小的膜厚度下，表面能控制生长并且预期（100）优选取向。 在大的膜厚度和高的衬底温度下，应变能占主导地位，并且预期（111）取向。
Sputter-deposited TiN thin films on glass substrate were investigated by X-ray diffraction analysis. The lattice parameter determined on the basis of (200) and (220) peaks is smaller than that determined on the basis of (111) peaks. A decrease in lattice parameter with increasing temperature was observed on annealing. The films exhibited preferred orientation. The tendency towards a specific preferred orientation is discussed on the basis of strain and surface energies. At low substrate temperature and/or at small film thickness surface energy controls growth and a (100) preferred orientation is expected. At large film thicknesses and at high substrate temperatures the strain energy predominates and the (111) orientation is expected.