Size distribution of Ge islands grown on Si(001)
Size distribution of Ge islands grown on Si(001)
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Si(001)上生长的Ge岛尺寸分布
DOI：
10.1063/1.119553
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发表时间：
1997
影响因子：
4
通讯作者：
K. Szot
中科院分区：
文献类型：
--
作者：
M. Goryll;L. Vescan;K. Schmidt;S. Mesters;H. Lüth;K. Szot
原子力显微镜分析了在525 ~ 700℃低温化学气相沉积生长的Si（001）上的Ge岛。并与描述相干应变岛和塑性松弛岛生长的理论模型作了比较，以描述观测结果。在较宽的温度范围内，相干应变岛的平均直径为170 nm，而塑性松弛岛的直径可达50 ~ 500 nm。宽高比与位错的存在无关。对于在700°C下生长的样品，可以观察到三种尺寸状态，而在最低温度下生长的样品则没有岛状结构。在550°C时，观察到平均直径为33 nm、宽高比较低的岛状结构；这些在量子约束效应的应用中可能会很有趣。
Atomic force microscopy analyses were performed on Ge islands on Si(001) grown by low pressure chemical vapor deposition in the temperature range from 525 to 700 °C. A comparison with theoretical models describing the growth of coherently strained and plastically relaxed islands is given to describe the observations. The mean diameter of coherently strained islands is found to be 170 nm over a wide range of temperature, whereas plastically relaxed islands grow up to diameters >500 nm. The aspect ratio turns out to be independent of the presence of dislocations. For the sample grown at 700 °C three size regimes could be observed, whereas the sample grown at the lowest temperature exhibits no island formation. At 550 °C islands with an average diameter of 33 nm and a low aspect ratio were observed; these could prove to be interesting in applications using quantum confinement effects.