Thermal spin flips in atom chips
Thermal spin flips in atom chips
复制标题
原子芯片中的热自旋翻转
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
E. Hinds
中科院分区：
文献类型：
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作者：
P. Rekdal;S. Scheel;P. Knight;E. Hinds
我们推导出一个一般表达式的自旋翻转率的原子附近捕获的任意电介质体，我们应用这个理论的情况下，一个两层的圆柱形金属线。将我们计算的自旋翻转寿命与金属板附近原子的预期寿命以及Jones等人在两层导线上方测量的寿命进行比较[MPA Jones，C.J. Vale，D. Sahagun，B.V. Hall和E.A. Hinds，Phys. Rev. Lett. 91，080401（2003）]。我们调查的寿命取决于材料的趋肤深度和尺度的缩放。这使我们得出一些关于操纵超冷原子的集成电路（原子芯片）设计的结论
We derive a general expression for the spin-flip rate of an atom trapped near an arbitrary dielectric body and we apply this theory to the case of a two-layer cylindrical metal wire. The spin-flip lifetimes we calculate are compared with those expected for an atom near a metallic slab and with those measured by Jones et al. above a two-layer wire [M.P.A. Jones, C.J. Vale, D. Sahagun, B.V. Hall, and E.A. Hinds, Phys. Rev. Lett. 91, 080401 (2003)]. We investigate how the lifetime depends on the skin depth of the material and on the scaling of the dimensions. This leads us to some conclusions about the design of integrated circuits for manipulating ultracold atoms (atom chips)