Transparent conductive ITO thin films through the sol-gel process using metal salts
Transparent conductive ITO thin films through the sol-gel process using metal salts
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DOI：
10.1016/s0040-6090(98)01748-9
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发表时间：
1999-06-22
期刊：
影响因子：
2.1
通讯作者：
Jin, HW
中科院分区：
文献类型：
--
作者：
Kim, SS;Choi, SY;Jin, HW
研究了ITO薄膜的电学、光学性质、结构和形貌。以无机金属盐为原料，采用溶胶-凝胶法在钠钙硅酸盐玻璃衬底上制备了质量分数为10%的掺锡氧化铟(ITO)薄膜。所研究的厚度范围为50-350 nm的薄膜均为多晶层，晶粒度随退火条件的不同在20-30 nm范围内。经X射线衍射仪、透射电子显微镜分析，未检测到SnO或SnO2相，生成的物相仅为三氧化二砷立方二钠铝石。在400℃下热处理的250 nm薄膜的方阻在空气中为6.18×10(3)欧姆/矩形，在氮气中为1.09×10(3)欧姆/矩形，在氧气中为15.21×10(3)欧姆/矩形。无论在何种气氛下，经400℃退火的150 nm薄膜的平均可见光透过率都在85%以上。根据AFM分析，50 nm薄膜的均方根粗糙度为18埃，350 nm薄膜的均方根粗糙度为25埃。X-射线光电子能谱(XPS)结果表明，锡取代地进入了In_2O_3结构中。(C)1999 Elsevier Science S.A.保留所有权利。
The electrical and optical properties, structure and morphology of ITO thin films were investigated. Ten percent by weight Sn-doped indium oxide (ITO) films were prepared on soda-lime-silicate glass substrate by the sol-gel spin coating method using inorganic metal salts. All layers studied with a thickness range of 50-350 nm were polycrystalline with grain sizes in the range 20-30 nm depending on the annealing conditions. SnO or SnO2 phase was not detected in terms of XRD, TEM analysis techniques and the resultant phase was only In2O3 cubic bixbyite. The sheet resistance of 250 nm thin films annealed at 400 degrees C was 6.18 x 10(3) Ohm/rectangle in air, 1.09 x 10(3) rectangle/Ohm in nitrogen, 15.21 x 10(3) Ohm/rectangle in oxygen, respectively. Four-hundred degree centigrade-annealed 150 nm films showed more than 85% of the average visible transmittance, regardless of annealing atmospheres. According to AFM analysis RMS roughness was 18 Angstrom for a 50 nm film and 25 Angstrom for a 350 nm film, respectively. XPS results revealed that Sn was incorporated into In2O3 structure substitutionally. (C) 1999 Elsevier Science S.A. All rights reserved.