Exploring the potential of high power impulse magnetron sputtering for growth of diamond-like carbon films
Exploring the potential of high power impulse magnetron sputtering for growth of diamond-like carbon films
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DOI：
10.1016/j.surfcoat.2011.11.032
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发表时间：
2012-01-25
影响因子：
5.4
通讯作者：
Patsalas, P.
中科院分区：
文献类型：
--
作者：
Sarakinos, K.;Braun, A.;Patsalas, P.
采用高功率脉冲磁控溅射（HiPIMS）在250 Hz和1 kHz的脉冲频率下沉积非晶碳膜。还通过直流磁控溅射（dcMS）来沉积膜以供参考。在HiPIMS和dcMS的情况下，单极脉冲负偏置电压高达150 V施加到衬底上，以调整轰击生长膜的带正电荷的离子的能量。等离子体分析表明，与dcMS相比，HiPIMS导致产生更大数量的具有更大平均能量的离子。与此同时，等离子体成分不受影响，在所有沉积条件下，Ar+离子都是主要的电离物质。薄膜性能分析表明，HiPIMS允许生长的非晶碳膜的sp（3）键分数高达45%，密度高达2.2克cm（-3）。通过dcMS获得的相应值分别为30%和2.05 g cm（-3）。的sp（3）键和质量密度发现在薄膜生长的HiPIMS的解释光的更强烈的离子照射所提供的HiPIMS放电相比，dcMS之一。(C)2011 Elsevier B. V.保留所有权利。
Amorphous carbon films are deposited employing high power impulse magnetron sputtering (HiPIMS) at pulsing frequencies of 250 Hz and 1 kHz. Films are also deposited by direct current magnetron sputtering (dcMS), for reference. In both HiPIMS and dcMS cases, unipolar pulsed negative bias voltages up to 150 V are applied to the substrate to tune the energy of the positively charged ions that bombard the growing film. Plasma analysis reveals that HiPIMS leads to generation of a larger number of ions with larger average energies, as compared to dcMS. At the same time, the plasma composition is not affected, with Ar+ ions being the dominant ionized species at all deposition conditions. Analysis of the film properties shows that HiPIMS allows for growth of amorphous carbon films with sp(3) bond fraction up to 45% and density up to 2.2 g cm(-3). The corresponding values achieved by dcMS are 30% and 2.05 g cm(-3), respectively. The larger fraction of sp(3) bonds and mass density found in films grown by HiPIMS are explained in light of the more intense ion irradiation provided by the HiPIMS discharge as compared to the dcMS one. (C) 2011 Elsevier B.V. All rights reserved.