Generation and use of parametric X-rays with an electron linear accelerator
Generation and use of parametric X-rays with an electron linear accelerator
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使用电子直线加速器产生和使用参量 X 射线
DOI:
10.1016/s0168-9002(00)01002-0
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发表时间:
2001
影响因子:
1.4
通讯作者:
Kazuaki Imai
中科院分区:
文献类型:
--
作者:
T. Akimoto;M. Tamura;Jiro Ikeda;Y. Aoki;F. Fujita;Koichi Sato;A. Honma;T. Sawamura;M. Narita;Kazuaki Imai
Parametric X-ray radiation (PXR) at energies from 15 to 30keV was produced by a 45MeV electron linear accelerator (LINAC) using a silicon (Si) single crystal. The appropriate conditions for generation of good monochromatic hard X-ray fields by PXR were obtained with the LINAC by theoretical calculations and experiments. The PXR intensity increased approximately linearly with the electron energy in the electron energy range of several tens of MeV. The PXR energy increased linearly with the crystal rotation angle that depended on the reflection plane and the observation angle and did not depend on the electron energy. The obtained counts of PXR increased at large observation angles although the energy decreased. The experiments used Si plates with thicknesses of 200, 300, 400, 500, 530, and 625μm. Differences in angular distribution by the thickness of the Si plates were established. The possibility for PXR applications to material research and other fields is discussed. The off angle of the polished (cut) plane of the crystal was accurately determined using the PXR and the attenuation coefficient around the K-shell absorption edge of Zr, Nb and Mo were measured.