Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
复制标题
等离子体物理气相沉积和氧自由基处理制备低介电常数铁电体Sr2(Ta1-x, Nbx)2O7
DOI：
10.1143/jjap.42.2050
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
I. Takahashi;H. Sakurai;A. Yamada;Kiyoshi Funaiwa;Kentarou Hirai;S. Urabe;T. Goto;M. Hirayama;A. Teramoto;S. Sugawa;T. Ohmi
Sr2Nb2O7 (SNO)家族的化合物适合用作铁电存储场效应晶体管(FET)的铁电材料，因为这些物质具有低介电常数和高耐热性。开发了应用于浮栅型铁电随机存取存储器(FFRAM)的极低介电常数铁电Sr2(Ta1-x,Nbx)2O7(STN)成膜技术。 STN 电容器的高铁电性能是通过等离子体物理气相沉积和使用微波激发 (2.45 GHz) 高密度 (>1012 cm-3) 低电子温度 (<1 eV) Kr/O2 等离子体的氧自由基处理实现的。
The compounds of the Sr2Nb2O7 (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Ta1-x,Nbx)2O7 (STN) film formation technology which is applied to floating gate type ferroelectric random access memory (FFRAM) has been developed. The high ferroelectric performance of the STN capacitor has been achieved by plasma physical vapor deposition and an oxygen radical treatment using microwave-excited (2.45 GHz) high-density (>1012 cm-3) low electron temperature (<1 eV) Kr/O2 plasma.