Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexyl thienothiophene units
Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexyl thienothiophene units
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DOI：
10.1039/c0jm02607g
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发表时间：
2011-02
影响因子：
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通讯作者：
Greg J. McEntee;F. Vilela;P. Skabara;T. Anthopoulos;J. Labram;S. Tierney;R. Harrington;W. Clegg
中科院分区：
文献类型：
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作者：
Greg J. McEntee;F. Vilela;P. Skabara;T. Anthopoulos;J. Labram;S. Tierney;R. Harrington;W. Clegg
报道了一种新的共轭材料的合成; BDHTT-BBT的特征在于中心缺电子的苯并双噻唑被两个3，6-二己基噻吩并[3，2-B]噻吩封端。使用循环伏安法测定HOMO（−5.7 eV）和LUMO（−2.9 eV）能级。通过单晶和薄膜样品的X射线衍射研究了该化合物的固态性质。用真空沉积的BDHTT-BBT薄膜构建了OFFEMS。薄膜在一定温度范围内发生相变，薄膜的形貌影响薄膜的电荷传输性能。从底部接触，顶栅器件观察到的最大空穴迁移率为3 × 10−3 cm 2 V− 1 s −1，开/关比为104-105，阈值电压为−42 V。
The synthesis of a new conjugated material is reported; BDHTT–BBT features a central electron-deficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (−5.7 eV) and LUMO (−2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film samples. OFETs were constructed with vacuum deposited films of BDHTT–BBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 × 10−3 cm2 V−1s−1, with an on/off ratio of 104–105 and a threshold voltage of −42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices.