Band gap opening of bilayer graphene by F4-TCNQ molecular doping and externally applied electric field.
Band gap opening of bilayer graphene by F4-TCNQ molecular doping and externally applied electric field.
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DOI：
10.1021/jp102800v
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发表时间：
2010-08
期刊：
影响因子：
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通讯作者：
X. Tian;Jianbin Xu;Xiaomu Wang
中科院分区：
文献类型：
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作者：
X. Tian;Jianbin Xu;Xiaomu Wang
报道了单层石墨烯单侧表面吸附F4-TCNQ的带隙开度。掺杂F4-TCNQ双层石墨烯表现出p型半导体特性。当F4-TCNQ浓度为1.3 x 10(-10) mol/cm(2)时，每个F4-TCNQ分子与石墨烯之间的电荷转移量为0.45e，石墨烯层之间的内置电场E（bi）可达0.070 V/ a。掺杂f4 - tcnq的石墨烯的电荷转移和带隙打开可以通过外加电场（E(ext)）进一步调制。在0.077 V/A时，Dirac点(K)的隙开度DeltaE(K) = 306 meV，带隙E(g) = 253 meV分别比相同E下的原始双分子层（ext）大71%和49%左右。
The band gap opening of bilayer graphene with one side surface adsorption of F4-TCNQ is reported. F4-TCNQ doped bilayer graphene shows p-type semiconductor characteristics. With a F4-TCNQ concentration of 1.3 x 10(-10) mol/cm(2), the charge transfer between each F4-TCNQ molecule and graphene is 0.45e, and the built-in electric field, E(bi), between the graphene layers could reach 0.070 V/A. The charge transfer and band gap opening of the F4-TCNQ-doped graphene can be further modulated by an externally applied electric field (E(ext)). At 0.077 V/A, the gap opening at the Dirac point (K), DeltaE(K) = 306 meV, and the band gap, E(g) = 253 meV, are around 71% and 49% larger than those of the pristine bilayer under the same E(ext).