Current status of single ion implantation
Current status of single ion implantation
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单离子注入研究现状
DOI：
10.1116/1.590196
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发表时间：
1998
影响因子：
1.4
通讯作者：
I. Ohdomari
中科院分区：
文献类型：
--
作者：
T. Shinada;Y. Kumura;Jun Okabe;T. Matsukawa;I. Ohdomari
据报道，单个离子植入（SII）的现状已被提出作为一种新技术，以抑制良好的半导体结构中的掺杂剂数量的波动。与传统离子植入相比，通过改善SE检测系统的目标，我们达到了90％的效率，从而确保了掺杂剂数量的波动减少到30％。更好的SE检测效率的改进也对精确的束对齐也有效。
The current status of single ion implantation (SII) which has been proposed as a novel technology to suppress the fluctuation in dopant number in fine semiconductor structures is reported. The key to control the ion number is to detect secondary electrons (SEs) emitted from a target upon ion incidence. By improving the SE detection system, we have achieved the efficiency of 90% which ensures the reduction in the fluctuation of dopant number to 30% compared to the conventional ion implantation. The improvement for the better SE detection efficiency has turned out to also be effective for the precise beam alignment. The single ion incident position can now be successfully controlled with an error of less than 0.3 μm.