Model for the Electronic Transport Properties of Mixed Valency Semiconductors
Model for the Electronic Transport Properties of Mixed Valency Semiconductors
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混合价半导体的电子传输特性模型
DOI：
10.1063/1.1777043
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发表时间：
1961
影响因子：
3.2
通讯作者：
R. Mazelsky
中科院分区：
文献类型：
--
作者：
R. Miller;R. R. Heikes;R. Mazelsky
它表明，简单的“跳跃模型”的混合价态半导体的输运过程是不够的杂质浓度[类似或大于] 1%。特别是，由于杂质在高浓度范围内起主导作用，因此有必要重新定义（1）自由电荷载流子的数量，以及（2）可用态的密度。
It is shown that the simple ``hopping model'' for the transport processes of mixed valency semiconductors is inadequate for impurity concentrations [similar or greaterthan]1%. In particular, it is necessary to redefine (1) the number of free charge carriers, and (2) the density of available states because of the dominant role played by the impurities in the high concentration range.