Spin-dependent phenomena and device concepts explored in (Ga, Mn) As
Spin-dependent phenomena and device concepts explored in (Ga, Mn) As
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DOI：
10.1103/revmodphys.86.855
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发表时间：
2014-07-11
影响因子：
44.1
通讯作者：
Nemec, P.
中科院分区：
文献类型：
--
作者：
Jungwirth, T.;Wunderlich, J.;Nemec, P.
在过去的二十年中，对（Ga, Mn） As的研究使人们对磁系统中的相对论性自旋依赖现象有了更深的理解。它还导致了新效应的发现和实验自旋电子器件前所未有的功能的演示，这些器件普遍适用于广泛的材料。本文综述了使（Ga, Mn）作为自旋电子学研究的良好试验台系统的基本材料性质，并讨论了（Ga, Mn） As研究在自旋相关现象和器件概念的一般背景下的贡献。特别关注自旋-轨道耦合诱导效应，并回顾了自旋与电流、光和热的相互作用。
Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. This is a review of the basic material properties that make (Ga, Mn) As a favorable test-bed system for spintronics research and a discussion of contributions of (Ga, Mn) As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat.