Double ionization of Ar below the recollision threshold intensity
Double ionization of Ar below the recollision threshold intensity
复制标题
Ar 的双电离低于重碰撞阈值强度
DOI：
10.1103/physreva.90.023410
复制
发表时间：
2014-08
影响因子：
2.9
通讯作者：
Jingtao Zhang
中科院分区：
文献类型：
--
作者：
Zilong Zhang;Lihua Bai;Jingtao Zhang
我们使用经典系综方法来分析Ar原子在较低激光强度下的非连续双电离。显示了相关电子动量分布。分别研究了来自重碰撞诱导电离（RII）和来自重碰撞诱导激发随后电离（RESI）的电子轨迹。我们发现RESI电子的动量均匀分布在动量分布图的四个象限，而RII电子的动量主要分布在动量分布图的第二和第四象限。两个电子之间的库仑斥力是 RII 中反相关发射的原因。 Liu等人观察到的快电子和慢电子的动量分布。 [物理。莱特牧师。 112, 013003 (2014)] 在我们的模拟中得到了很好的再现。
We use the classical ensemble method to analyze the nonsequential double ionization of Ar atoms at a lower laser intensity. The correlated-electron momentum distribution is shown. The electron trajectories from recollision-induced ionization (RII) and from recollision-induced excitation with subsequent ionization (RESI) are studied separately. We find that the momentum of RESI electrons distributes uniformly in the four quadrants of the momentum distribution diagram, while that of RII electrons distributes mainly in the second and fourth quadrants of the momentum distribution diagram. The Coulomb repulsion between the two electrons is responsible for the anticorrelation emission in RII. The momentum distributions of the fast and the slow electrons observed by Liu et al. [Phys. Rev. Lett. 112, 013003 (2014)] are well reproduced in our simulations.