Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits
Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits
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Si和SiC MOSFET短路时热应力对比分析
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
S. Manias
中科院分区：
文献类型：
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作者：
G. Kampitsis;S. Papathanassiou;S. Manias
本文研究了硅（Si）和碳化硅（SiC）功率MOSFET在短路过程中的性能。这两个半导体的响应检查硬开关故障和故障下的负载条件下使用短路测试板。此外，还记录和分析了它们的失效机理。测试结果表明，SiC MOSFET在能量限制模式下由于栅氧化层破裂而失效，而Si MOSFET在功率限制模式下，在故障开始时就被破坏。这些设备的电热特性是通过三维有限元分析，利用实验提取的功耗为每个晶体管。仿真结果证实了SiC功率MOSFET在其安全工作区之外表现出的出色耐用性。
In this paper, the performance of silicon (Si) and silicon carbide (SiC) power MOSFETs during short circuits is investigated. The response of both semiconductors is examined under hard switch fault and fault under load conditions using a short circuit tester board. In addition, their failure mechanism is recorded and analyzed. Examination results show that the SiC MOSFET fails in the energy limiting mode, due to gate oxide rupture, while the Si MOSFET is destructed during the power limiting mode, at the beginning of the fault. The electro-thermal characterization of these devices is performed through three-dimensional finite element analysis, utilizing the experimentally extracted power dissipation for each transistor. Simulation results confirm the exceptional ruggedness that SiC power MOSFETs exhibit outside their safe operating area.