Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24As0.08Sb0.92∕GaSb single quantum wells of various widths
Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24As0.08Sb0.92∕GaSb single quantum wells of various widths
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DOI：
10.1063/1.2840161
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发表时间：
2008-01
影响因子：
4
通讯作者：
R. Kudrawiec;M. Motyka;J. Misiewicz;M. Hümmer;K. Rößner;T. Lehnhardt;M. Muller;A. Forchel
中科院分区：
文献类型：
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作者：
R. Kudrawiec;M. Motyka;J. Misiewicz;M. Hümmer;K. Rößner;T. Lehnhardt;M. Muller;A. Forchel
用室温非接触电反射(CER)方法研究了宽度从10 nm到21 nm的Ga0.76In0.24As0.08Sb0.92/GaSb量子阱的光学跃迁。除了量子阱(QW)基态跃迁(11H)外，在CER谱中还观察到了22H和33H跃迁(其中KLh表示第k个重空穴和第l个电子子带之间的跃迁)。用有效质量形式主义模型对实验得到的量子波跃迁能与理论预测值进行了比较。结果表明，该量子阱对电子和空穴均为I型，无应变Ga0.76In0.24As0.08Sb0.92/GaSb界面的导带偏移量为∼的90%。
The optical transitions in Ga0.76In0.24As0.08Sb0.92∕GaSb quantum wells with the width varying from 10to21nm were studied by room temperature contactless electroreflectance (CER). In addition to the quantum well (QW) ground state transition (11H), the 22H and 33H transitions (where klH denotes transition between the kth heavy hole and the lth electron subbands) have been clearly observed in CER spectra. The experimental QW transition energies were compared with theoretical predictions based on an effective mass formalism model. It has been concluded that this QW is type I for both electron and holes and the conduction band offset for the unstrained Ga0.76In0.24As0.08Sb0.92∕GaSb interface equals ∼90%.