Ka-Band SiGe HBT Low Phase Imbalance Differential 3-Bit Variable Gain LNA
Ka-Band SiGe HBT Low Phase Imbalance Differential 3-Bit Variable Gain LNA
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DOI：
10.1109/lmwc.2008.918917
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发表时间：
2008-03
影响因子：
3
通讯作者：
Byung-Wook Min;Gabriel M. Rebeiz
中科院分区：
文献类型：
--
作者：
Byung-Wook Min;Gabriel M. Rebeiz
本文介绍了一种低插入相位不平衡的Ka频段差分变增益低噪声放大器(VG-LNA)的设计与实现。VG-LNA基于0.12微米的SiGe异质结双极晶体管工艺，通过偏置电流控制实现增益变化。测量的VG-LNA在32-34 GHz的增益为9-20分贝，具有8种不同的线性增益状态，噪声系数为3.4-4.3分贝。在26-40 GHz的频率范围内，测量到的均方根相位不平衡为<；2.5°，这是通过在偏置网络中使用一种新型的补偿电阻实现的。VG-LNA的功耗为33 mW(13.5 mA，2.5 V)，输入1-dB增益压缩点为-27 dBm。芯片尺寸为0.13mm2，不带焊盘。
This letter presents the design and implementation of a differential Ka-band variable gain low noise amplifier (VG-LNA) with low insertion phase imbalance. The VG-LNA is based on a 0.12 mum SiGe heterojunction bipolar transistor process, and the gain variation is achieved using bias current steering. The measured VG-LNA gain at 32-34 GHz is 9-20 dB with eight different linear-in-magnitude gain states, and with a noise figure of 3.4-4.3 dB. The measured rms phase imbalance is < 2.5deg at 26-40 GHz for all gain states and this is achieved using a novel compensating resistor in the bias network. The VG-LNA consumes 33 mW (13.5 mA, 2.5 V) and the input 1-dB gain compression point is -27 dBm. The chip size is 0.13 mm2 without pads.