Misfit dislocation anisotropies in the InGaAs/GaAs(001) interface measured using X-ray topography and reciprocal space mapping
Misfit dislocation anisotropies in the InGaAs/GaAs(001) interface measured using X-ray topography and reciprocal space mapping
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DOI：
10.7567/jjap.53.018001
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发表时间：
2013
影响因子：
1.5
通讯作者：
Hidetoshi Suzuki;T. Matsushita;M. Katayama;K. Maeda;T. Ikari
中科院分区：
文献类型：
--
作者：
Hidetoshi Suzuki;T. Matsushita;M. Katayama;K. Maeda;T. Ikari
利用X射线形貌术和X射线倒易空间映射技术研究了InGaAs/GaAs（001）界面失配位错的各向异性。MD在小区域内聚束形成MD束。一个MD束中包含的沿沿着方向的MD（α-MD）的数量大于沿沿着[110]方向的MD（β-MD）的数量。此外，成束的α-MD比其他MD更周期性地排列。
The anisotropies of misfit dislocations (MDs) formed at an InGaAs/GaAs(001) interface grown by molecular beam epitaxy were investigated using X-ray topography and X-ray reciprocal space mapping techniques. The MDs bunched in small regions to form MD bunches. The number of MDs running along the direction (α-MDs) included in one MD bunch was larger than that along the [110] direction (β-MDs). In addition, the bunched α-MDs were aligned more periodically than the other MDs.