Low‐temperature growth of ZnSe by molecular beam epitaxy using cracked selenium
Low‐temperature growth of ZnSe by molecular beam epitaxy using cracked selenium
复制标题
利用裂解硒进行分子束外延低温生长 ZnSe
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
T. Marshall
中科院分区：
文献类型：
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作者：
D. Cammack;K. Shahzad;T. Marshall
研究了用裂解硒源分子束外延生长硒化锌的过程。研究发现，在比未破解的硒源低得多的衬底温度下，可以实现高质量的生长。反射高能电子衍射观察表明，在衬底温度低至2 2 2 °C时，裂解硒的生长以二维机制为主，而在衬底开始生长前将裂解硒暴露在衬底中，对衬底和生长的早期阶段有很大影响。
The growth of zinc selenide by molecular beam epitaxy using a cracked selenium source is studied. It is found that high quality growth can be achieved at substantially lower substrate temperatures than has been possible using uncracked selenium sources. It is determined from reflection high‐energy electron diffraction observations that the use of cracked selenium produces growth dominated by a two‐dimensional mechanism at substrate temperatures as low as 225 °C and that exposure of the GaAs substrate to cracked selenium prior to the initiation of growth has a substantial effect on the GaAs substrate and the early stages of ZnSe growth.