Near infrared light-emitting diodes based on n-InNip-NiO/p-Si heterojunction
Near infrared light-emitting diodes based on n-InNip-NiO/p-Si heterojunction
复制标题
基于n-InNip-NiO/p-Si异质结的近红外发光二极管
DOI：
10.1016/j.jlumin.2015.12.048
复制
发表时间：
2016-05-01
影响因子：
3.6
通讯作者：
Du, Guotong
中科院分区：
文献类型：
--
作者：
Zhao, Yang;Wang, Hui;Du, Guotong
采用等离子体辅助分子束外延（PAMBE）结合射频磁控溅射技术制备了n-InN/p-NiO/p-Si异质结发光二极管（LED）。该器件具有二极管整流的电流-电压特性，并具有2.0 V的导通电压。在正向偏压下，在室温下观察到一个突出的窄近红外（NIR）发射峰值约为1565 nm。近红外发射被证明来自InN层的带边发射。此外，对LED在稳定性和效率方面的研究也进行了详细的讨论。(C)2015 Elsevier B. V.版权所有。
We fabricated the light-emitting diodes (LEDs) consisting of n-InN/p-NiO/p-Si heterostructure by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (RF) magnetron sputtering. The device exhibited diode-like rectifying current-voltage characteristics and had a turn-on voltage of 2.0 V. Under forward bias, a prominent narrow near infrared (NIR) emission peaked around 1565 nm was observed at room temperature. The NIR emission was demonstrated to come from the band-edge emission of InN layer. Moreover, the study of the LED in terms of the stability and efficiency were also discussed in detail. (C) 2015 Elsevier B.V. All rights reserved.