Temperature-frequency dependence and mechanism of dielectric properties for γ-Y 2 Si 2 O 7
Temperature-frequency dependence and mechanism of dielectric properties for γ-Y 2 Si 2 O 7
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DOI：
10.1088/1674-1056/19/1/017702
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发表时间：
2010
影响因子：
1.7
通讯作者：
Hou Zhi-Ling-;Hou Zhi-Ling-;Cao Mao-sheng;Yuan jie;Song Wei-Li
中科院分区：
文献类型：
--
作者：
Hou Zhi-Ling-;Hou Zhi-Ling-;Cao Mao-sheng;Yuan jie;Song Wei-Li
以Y2 O3粉末和纳米SiO2粉末为原料，采用充分混合和冷压烧结工艺制备了单相γ-Y2 Si 2 O 7。研究了γ-Y_2Si_2O_7陶瓷的介电性能随温度和频率的变化。γ-Y2 Si 2 O 7在25 ~ 1400 °C、7.3 ~ 18 GHz范围内具有低的介电损耗和非德拜弛豫行为。解释了γ-Y_2Si_2O_7与SiO_2不同的极化弛豫机理。这种特殊的介电性能可能会对广泛的实际应用产生特殊的吸引力。
This paper reports that single-phase γ-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 °C in the range of 7.3–18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.