Ion-sculpting of Nanopores in Amorphous Metals, Semiconductors and Insulators
Ion-sculpting of Nanopores in Amorphous Metals, Semiconductors and Insulators
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非晶金属、半导体和绝缘体中纳米孔的离子雕刻
DOI：
10.1063/1.3441406
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发表时间：
2010
影响因子：
4
通讯作者：
M. Aziz
中科院分区：
文献类型：
--
作者：
H. B. George;D. Hoogerheide;C. Madi;D. Bell;J. Golovchenko;M. Aziz
我们报告了通过离子雕刻将纳米孔闭合到个位数纳米尺寸的一系列非晶材料，包括绝缘体（SiO2和SiN），半导体（a- si）和金属玻璃(Pd80Si20) -个位数纳米电子器件的构建块。离子照射晶体材料（Pt和Ag）的纳米孔不会导致纳米孔闭合。在100℃以下和600℃以上，跨越非晶动态转变温度的C - si孔的离子辐照，在较低温度下产生闭合，但在较高温度下没有质量输运。离子束纳米造型似乎仅限于在离子辐照过程中形成或变成非晶态的材料。
We report the closure of nanopores to single-digit nanometer dimensions by ion sculpting in a range of amorphous materials including insulators (SiO2 and SiN), semiconductors (a-Si), and metallic glasses (Pd80Si20)—the building blocks of a single-digit nanometer electronic device. Ion irradiation of nanopores in crystalline materials (Pt and Ag) does not cause nanopore closure. Ion irradiation of c-Si pores below 100 °C and above 600 °C, straddling the amorphous-crystalline dynamic transition temperature, yields closure at the lower temperature but no mass transport at the higher temperature. Ion beam nanosculpting appears to be restricted to materials that either are or become amorphous during ion irradiation.