Growth of AlN (112̄0) on 6H-SiC (112̄0) by Molecular-Beam Epitaxy
Growth of AlN (112̄0) on 6H-SiC (112̄0) by Molecular-Beam Epitaxy
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通过分子束外延在 6H-SiC (112̄0) 上生长 AlN (112̄0)
DOI：
10.1143/jjap.41.l1348
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发表时间：
2002
影响因子：
1.5
通讯作者：
H. Matsunami
中科院分区：
文献类型：
--
作者：
N. Onojima;J. Suda;H. Matsunami
研究了在6 H-SiC衬底上沿平行于方向的（112 <$0）晶面外延生长AlN<0001>。氮化铝外延层的生长使用元素铝和射频等离子体激发的氮（N*）的分子束外延（MBE）。AlN层的表面粗糙度相对较小（均方根粗糙度为0.98 nm）。从反射高能电子衍射（RHEED）的结果可以看出，在6 H-SiC（1120）衬底上的AlN层是朝着[112 <$0]方向生长的，而不是朝着[0001]方向。AlN和6 H-SiC（112 μ 0）具有精确的外延关系，即，[112[0001]AlN [0001]SiC。根据显微拉曼散射光谱的结果，对AlN层的多型性进行了讨论。
AlN epitaxial growth on 6H-SiC substrates with the (112̄0) face, which is parallel to the <0001> direction, has been investigated. AlN epitaxial layers were grown by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). The surface roughness of the AlN layers was relatively small (rms roughness of 0.98 nm). From the results of reflection high-energy electron diffraction (RHEED), AlN layers on 6H-SiC (1120) substrates were revealed to be grown toward the [112̄0] direction, not toward the [0001] direction. AlN and 6H-SiC (112̄0) had an exact epitaxial relationship, i.e., [112̄0]AlN∥[112̄0]SiC and [0001]AlN∥[0001]SiC. The polytype of the AlN layer was also discussed based on the results of microscopic Raman scattering spectroscopy.