Electric- and magnetic-field effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells
Electric- and magnetic-field effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells
复制标题
DOI：
10.1088/0268-1242/21/1/016
复制
发表时间：
2005
影响因子：
1.9
通讯作者：
Z. Ji;H. Mino;K. Oto;R. Akimoto;K. Ōno;S. Takeyama
中科院分区：
文献类型：
--
作者：
Z. Ji;H. Mino;K. Oto;R. Akimoto;K. Ōno;S. Takeyama
研究了调制n掺杂ZnSe/BeTe/ZnSe Ⅱ型量子威尔斯阱的光致发光特性。的发光光谱和偏振各向异性显着依赖于两个n-掺杂到势垒层和垂直于层的外加电场。这些被解释为屏蔽的内置电场与n-掺杂和斯塔克效应，由于所施加的电场。我们发现光学Shubinkov-de Hass振荡的光致发光强度和跃迁能量下的高磁场垂直的井。这些特征和额外的红外回旋共振测量表明，高浓度的二维电子气已形成在掺杂样品。所有这些都提出了带电激子的签名，也是一个相关的激子相的II型量子威尔斯。
We have studied the photoluminescence properties of modulation n-doped ZnSe/BeTe/ZnSe type-II quantum wells. The luminescence spectra and the polarization anisotropy depend strikingly on both the n-doping into the barrier layers and an applied external electric field perpendicular to the layers. These are explained by screening of a built-in electric field with n-doping and Stark effects due to the applied electric field. We find optical Shubinkov–de Hass oscillations in both the photoluminescence intensity and the transition energy under a high magnetic field perpendicular to the well. These features and additional infrared cyclotron-resonance measurements demonstrate that two-dimensional electron gas of a high concentration has been formed in the doped samples. All these present the signature of the charged excitons and also of a correlated excitonic phase of type-II quantum wells.