Nitrogen-Doped Ti3C2Tx MXene Induced by Plasma Treatment with Enhanced Microwave Absorption Properties
Nitrogen-Doped Ti3C2Tx MXene Induced by Plasma Treatment with Enhanced Microwave Absorption Properties
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等离子体处理诱导的氮掺杂 Ti3C2TX MXene 具有增强的微波吸收性能
DOI：
10.1021/acsami.1c17015
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发表时间：
2021-10-08
影响因子：
9.5
通讯作者：
Zhou, Yang
中科院分区：
文献类型：
--
作者：
Xu, Weimin;Li, Shibo;Zhou, Yang
Ti3C2Tx由于其介电损耗而具有微波吸收特性，但由于缺乏纯Ti3C2Tx的磁损耗能力，导致其阻抗不匹配，导致其微波吸收性能不理想。用磁性粒子对Ti3C2Tx进行改性是引入磁损耗机理的有效途径。然而，这些改性Ti3C2Tx粒子密度较高，制备工艺复杂，限制了其工业化生产和功能应用。本文采用一种低温、简单的射频N-2等离子体处理方法，用n修饰Ti3C2Tx。更有趣的是，掺n的Ti3C2Tx薄片表现出磁性能，从而显著增强了MA性能。在等离子体处理3 min后，掺n Ti3C2Tx产品在10.56 GHz时的最小反射损耗（RLmin）为-59.20 dB，显著高于原始Ti3C2Tx在7.92 GHz时的-11.07 dB。其主要机理是由于n掺杂Ti3C2Tx的介电损耗、磁损耗和良好的阻抗匹配共同作用。进一步延长氮化时间会导致-F的大量脱附和TiO2的生成，从而使阻抗匹配和MA性能恶化。
Ti3C2Tx has microwave absorption (MA) properties due to its dielectric loss, but the absence of magnetic loss capability of pure Ti3C2Tx causes unmatched impedance and unsatisfied MA performance. Modification of Ti3C2Tx with magnetic particles is an effective way to introduce the magnetic loss mechanism. However, these modified Ti3C2Tx particles have higher density and require complicated fabrication processes, restricting the industrial production and functional applications. Here, a low-temperature and simple method of radiofrequency N-2 plasma treatment was adopted to modify Ti3C2Tx with N. More interestingly, the N-doped Ti3C2Tx flakes demonstrated magnetic properties and thus exhibited drastically enhanced MA properties. The minimum reflection loss (RLmin) of -59.20 dB at 10.56 GHz was achieved in N-doped Ti3C2Tx products after only 3 min of plasma treatment, remarkably higher than RLmin of -11.07 dB at 7.92 GHz for the pristine Ti3C2Tx. The main mechanism is due to the combination of dielectric loss, magnetic loss, and the good impedance matching in the N-doped Ti3C2Tx. Further prolonging the nitriding time induces much desorption of -F and the formation of TiO2, thus deteriorating the impedance matching and the MA properties.