Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene.
Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene.
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DOI：
10.1038/srep30210
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发表时间：
2016-07-22
影响因子：
4.6
通讯作者：
Cohen LF
中科院分区：
文献类型：
--
作者：
Shautsova V;Gilbertson AM;Black NC;Maier SA;Cohen LF
我们报告了一种CVD六方氮化硼（hBN-）辅助转移方法，该方法能够实现无聚合物杂质的转移过程和随后的大面积CVD生长石墨烯的顶部封装。我们证明，在这种转移技术中使用的CVD hBN层作为石墨烯膜和支撑聚合物层之间的缓冲层。我们表明，所得到的石墨烯层具有较低的掺杂浓度，和改善的载流子迁移率相比，石墨烯膜通过传统的转移方法生产到未经处理的SiO2/Si，SAM改性和hBN覆盖的SiO2/Si基板。此外，我们表明，在转移过程中使用的顶部hBN层作为一个有效的顶部封装，从而提高了对环境暴露的稳定性。该转移方法适用于在铜箔上的其他CVD生长的2D材料，从而促进具有受控掺杂的货车范德华异质结构的制备。
We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration, and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO2/Si, SAM-modified and hBN covered SiO2/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping.