Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric
Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric
复制标题
具有 HfO2 栅极电介质的金属氧化物半导体场效应晶体管中频率相关动态电荷捕获的物理模型
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
D. Kwong
中科院分区：
文献类型：
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作者：
C. Shen;M. F. Li;H. Y. Yu;X. Wang;Y. Yeo;D. Chan;D. Kwong
在这封信中，我们报告了一个物理模型来解释具有超薄HfO2栅极电介质的金属氧化物半导体（MOS）晶体管中动态电荷捕获的频率依赖性。对于在给定栅极电压幅值的互补MOS逆变电路中工作的晶体管，我们观察到当应力频率增加时电荷捕获减少。这可以用高钾HfO2电介质中的陷阱具有负u中心的性质来解释。一个陷阱可以连续捕获两个电子，并且由于晶格弛豫，陷阱能量降低。模型计算结果与实验数据吻合良好。
In this letter, we report on a physical model to explain the frequency dependence of dynamic charge trapping in metal-oxide-semiconductor (MOS) transistors with ultrathin HfO2 gate dielectrics. For transistors operating in a complementary MOS inverter circuit with a given gate voltage amplitude, we observed a reduction of charge trapping when the stress frequency is increased. This can be explained by the traps in the high-k HfO2 dielectric have the property of negative-U centers. One trap can capture two electrons sequentially, and the trap energy is reduced as a result of lattice relaxation. Results of calculation using the model show excellent agreement with all experiment data.