Low-barrier heterojunction of epitaxial silicide composed of W encapsulating Si clusters with n-type Si

Low-barrier heterojunction of epitaxial silicide composed of W encapsulating Si clusters with n-type Si
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W封装Si团簇与n型Si组成的外延硅化物低势垒异质结

DOI:
10.1063/1.4767136
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发表时间:
2012
影响因子:
4
通讯作者:
N. Uchida and T. Kanayama
N. Uchida and T. Kanayama
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
N. Okada;N. Uchida and T. Kanayama

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