Characterization of zirconia films deposited by rf magnetron sputtering
Characterization of zirconia films deposited by rf magnetron sputtering
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DOI：
10.1016/s0921-5107(98)00205-0
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发表时间：
1998-12-04
期刊：
影响因子：
--
通讯作者：
Nardin, M
中科院分区：
文献类型：
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作者：
Ben Amor, S;Rogier, B;Nardin, M
采用射频磁控溅射法制备了氧化锆薄膜。从ZrO 2靶磁控溅射。系统地研究了溅射参数（总压、氧分压和射频等）对薄膜生长的影响。功率）对膜组成及其结构和光学性质的影响。根据溅射气体的不同，氧化锆薄膜的晶型可以是立方相，也可以是单斜相。薄膜的结晶度和致密性随溅射粒子动能的增加而增加。应力是压缩的，并且在以高功率密度沉积的厚膜中变得非常重要。薄膜一般是亚化学计量和它们的O/Zr原子比被发现增加与氧分压。相反，在高溅射压力（大于5 Pa）下沉积的膜含有过量的氧。这种过化学计量的结果，正如F。T. I. R.分析，从纳入水和羟基到ZrO 2结构。光学常数（折射率和消光系数）也随沉积条件在宽范围内变化。这些变化主要与结构特性相关。(C)1998年Elsevier Science S.A. All rights reserved.
Thin films of zirconium oxide were prepared by r.f. magnetron sputtering from a ZrO2 target. A systematic study has been made on the influence of the sputtering parameters (total pressure, oxygen partial pressure and r.f. power) on the film composition and on their structural and optical properties. The zirconia films crystallize either in the cubic or in the monoclinic phases depending on the sputtering gas. The crystallinity and the compactness of the films were found to increase with the kinetic energy of the sputtered particles. The stresses are compressive and become very important in thick films deposited at a high power density. Films are generally substoichiometric and their O/Zr atomic ratio was found to increase with the oxygen partial pressure. On the contrary, films deposited at high sputtering pressures (more than 5 Pa) contain an oxygen excess. This overstoichiometry results, as it was revealed by F. T. I. R. analyses, from the incorporation of water and hydroxyl groups into the ZrO2 structure. The optical constants (refractive index and extinction coefficient) vary also in a wide range with the deposition conditions. These variations were correlated mainly to structural properties. (C) 1998 Elsevier Science S.A. All rights reserved.