Area-controlled growth of InAs quantum dots and improvement of density and size distribution
Area-controlled growth of InAs quantum dots and improvement of density and size distribution
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InAs 量子点的区域控制生长以及密度和尺寸分布的改善
DOI：
10.1063/1.1327613
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发表时间：
2000
影响因子：
4
通讯作者：
Y. Arakawa
中科院分区：
文献类型：
--
作者：
J. Tatebayashi;M. Nishioka;T. Someya;Y. Arakawa
我们提出并证明了一个计划（面积控制的增长），用于控制自组装InAs量子点的形成，使用二氧化硅掩模和选择性区域金属有机化学气相沉积生长。使用这种技术，可以仅在生长平面的选定区域中形成量子点。然而，在形成点的区域中，由于气相中物质的扩散，点密度和尺寸沿着掩模条方向存在变化。通过改变掩模图案，我们实现了更均匀的网点密度和尺寸分布。使用这种生长技术，可以制造包含外部反射器以及用作半导体激光器的有源层的量子点的集成光学器件。
We propose and demonstrate a scheme (area-controlled growth) for controlling where self-assembled InAs quantum dots form, using a SiO2 mask and selective area metalorganic chemical vapor deposition growth. Using this technique, quantum dots can be formed in only selected areas of a growth plane. However, in the regions where dots are formed there is variation of dot density and size along the mask stripe direction because of the diffusion of species in the vapor phase. We achieve more uniform distributions of dot density and size by changing the mask pattern. Using this growth technique, it is possible to fabricate integrated optical devices containing an external reflector together with quantum dots serving as the active layer of a semiconductor laser.