Large surface-state conductivity in ultrathin Bi films
Large surface-state conductivity in ultrathin Bi films
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DOI：
10.1063/1.2813613
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发表时间：
2007-11-12
影响因子：
4
通讯作者：
Nagao, T.
中科院分区：
文献类型：
--
作者：
Hirahara, T.;Matsuda, I.;Nagao, T.
用四探针法测量了Si（111）-7x7衬底上的Bi 2 O3薄膜的电导率。从厚度依赖的电导率和通过表面氧化降低电导率的外推，我们发现了Bi（001）膜中大的表面态电导率（室温下σ（SS）类似于1.5 × 10（-3）Ω（-1）/平方）的明确证据。对于最薄的膜（类似于25 A），输运性质由Rashba自旋分裂的高度惰性的表面态主导，并且这表明将这些Bi表面态用于自旋电子器件应用的可能性。(c)2007年，美国物理学会。
In situ microscopic-four-point probe conductivity measurements were performed for ultrathin Bi films on Si(111)-7x7. From the extrapolation of thickness-dependent conductivity and decrease in conductivity through surface oxidization, we found clear evidence of large surface-state conductivity (sigma(SS)similar to 1.5x10(-3) Omega(-1)/square at room temperature) in Bi(001) films. For the thinnest films (similar to 25 A), the transport properties are dominated by the highly inert surface states that are Rashba spin-split, and this suggests the possibility of using these Bi surface states for spintronics device application. (c) 2007 American Institute of Physics.