In-plane strain fluctuation in strained-Si/SiGe heterostructures
In-plane strain fluctuation in strained-Si/SiGe heterostructures
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DOI：
10.1063/1.1629142
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发表时间：
2003-11-24
影响因子：
4
通讯作者：
Nakagawa, K
中科院分区：
文献类型：
--
作者：
Sawano, K;Koh, S;Nakagawa, K
利用显微拉曼光谱研究了应变Si/弛豫SiGe异质结构中的面内应变涨落。结果表明，SiGe缓冲层的应变弛豫必然会引起失配位错的产生，从而导致应变Si层和SiGe缓冲层中产生微米级的不均匀应变场，进而影响器件性能。退火后，波动被发现是由于应变Si的部分应变弛豫增强，特别是在退火前的拉伸应变相对较高的区域。从SiGe在平坦化SiGe缓冲层上的同质外延生长，证实了生长速率也横向波动，与面内应变变化相对应。(C)2003年，美国物理学会。
In-plane strain fluctuation in the strained-Si/relaxed-SiGe heterostructure was studied by micro-Raman spectroscopy. It was found that misfit dislocation, which is necessarily induced by strain relaxation of SiGe buffer layers, caused micrometer-scale inhomogeneous strain field in the strained-Si layer as well as SiGe buffer, which may degrade device performance. After annealing, the fluctuation was found to be enhanced due to partial strain relaxation of strained Si, particularly in the region where tensile strain was relatively high before annealing. From homoepitaxial growth of SiGe on planarized SiGe buffer layers, it was confirmed that the growth rate also fluctuated laterally, in correspondence with the in-plane strain variation. (C) 2003 American Institute of Physics.