Investigation of the intershell higher order resonant recombination and polarization of X-ray emission of B-like silicon ions
Investigation of the intershell higher order resonant recombination and polarization of X-ray emission of B-like silicon ions
复制标题
B类硅离子X射线发射的壳间高阶共振复合和偏振研究
DOI：
10.1002/xrs.3081
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发表时间：
2019
影响因子：
1.2
通讯作者：
Dong Chenzhong
中科院分区：
文献类型：
--
作者：
Xie Luyou;Lu Simei;Cheng Xiaoshu;Zhang Denghong;Jiang Jun;Dong Chenzhong
利用Flexible Atomic Code程序研究了高电荷态Si ~（9+）离子在初始基态2 P ~（1/2）和亚稳态2 P ~（3/2）下K壳层双电子、三电子和四电子复合和X射线发射的极化.结果表明，长寿命亚稳态的共振复合截面与基态的共振复合截面在量级上相当，这对等离子体诊断具有重要意义。对于Si ~（9+）（2 P ~（1/2）），三电子复合对总共振复合强度的贡献约为25%，低于以前的计算值。本文比较了Si ~（9+）（2 P ~（1/2））和Si ~（9+）（2 P ~（3/2））离子的十一条主共振复合伴线的线偏振度。对于相同的X射线谱线，在2 P1/2和2 P3/2之间发现了很大的偏振变化，这可以用来诊断中间共振态和相应X射线谱线的形成机制。
K‐shell dielectronic, trielectronic, and quadruelectronic recombination and polarization of X‐ray emission have been studied for the highly chargedSi9+ions in the initial ground state2P1/2and the metastable state2P3/2using the Flexible Atomic Code. It is found that the resonant recombination cross section from the long‐lived metastable state is comparable in magnitude with that of the ground state, so it is important for plasma diagnostics. ForSi9+(2P1/2), trielectronic recombination contributions of nearly 25% to the total resonant recombination strength are predicted, which is less than previous calculations. We compare the degree of linear polarization for the eleven dominant resonant recombination satellite lines from the initial parentSi9+(2P1/2) andSi9+(2P3/2) ions. For the same X‐ray lines, large variations of polarization are found between2P1/2and2P3/2, which can be employed to diagnose formation mechanisms of intermediate resonance states and corresponding X‐ray lines.