Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation
Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation
复制标题
FinFET中延伸离子注入引起的残余缺陷对寄生电阻及其波动的影响
DOI：
10.1016/j.sse.2017.03.014
复制
发表时间：
2017
影响因子：
1.7
通讯作者：
and M. Masahara
中科院分区：
文献类型：
--
作者：
T. Matsukawa;Y. Liu;T. Mori;Y. Morita;S. Otsuka;S. O’uchi;H. Fuketa;S. Migita;and M. Masahara
