Photoresponse improvement of mixed-dimensional 1D-2D GaAs photodetectors by incorporating constructive interface states
Photoresponse improvement of mixed-dimensional 1D-2D GaAs photodetectors by incorporating constructive interface states
复制标题
通过结合相长界面态改善混合维 1D–2D GaAs 光电探测器的光响应
DOI：
10.1039/d0nr06788a
复制
发表时间：
2021-01-14
期刊：
影响因子：
6.7
通讯作者：
Wei, Zhipeng
中科院分区：
文献类型：
--
作者：
Wang, Dengkui;Chen, Xue;Wei, Zhipeng
与传统的低维器件设计相比，混合维光电子器件的设计带来了新的挑战和机遇。在这项工作中，我们开发了未报道的混合维GaAs光电探测器，利用一维GaAs纳米线（NWs）和二维GaAs非层状片（2DNLSs）作为有源器件材料。在532 nm辐照下，所制备的探测器的响应率为677 A W-1，探测率为8.69 × 10（12）cm Hz（0.5）W-1，已经远远优于现有的低维GaAs探测器。结果表明，这种独特的器件结构能够将纳米线和2DNLS的有害表面态转化为具有建设性的界面态，这有助于在器件沟道中形成准II型能带结构和电子威尔斯阱，从而显著提高器件的性能.更重要的是，这些界面状态被证明是不敏感的周围环境，表明该设备的上级稳定性。这些结果为利用纳米材料的表面态制备高性能的光电探测器提供了一条简单而有效的途径。
Mixed-dimensional optoelectronic devices bring new challenges and opportunities over the design of conventional low-dimensional devices. In this work, we develop unreported mixed-dimensional GaAs photodetectors by utilizing 1D GaAs nanowires (NWs) and 2D GaAs non-layered sheets (2DNLSs) as active device materials. The fabricated photodetector exhibits a responsivity of 677 A W-1 and a detectivity of 8.69 x 10(12) cm Hz(0.5) W-1 under 532 nm irradiation, which are already much better than those of state-of-the-art low-dimensional GaAs photodetectors. It is found that this unique device structure is capable of converting the notoriously harmful surface states of NWs and 2DNLSs into their constructive interface states, which contribute to the formation of quasi-type-II band structures and electron wells in the device channel for the substantial performance enhancement. More importantly, these interface states are demonstrated to be insensitive to ambient environments, indicating the superior stability of the device. All these results evidently illustrate a simple but effective way to utilize the surface states of nanomaterials to achieve the high-performance photodetectors.