Band Discontinuities in Gallium Phosphide/Crystalline Silicon Heterojunctions Studied by Internal Photoemission
Band Discontinuities in Gallium Phosphide/Crystalline Silicon Heterojunctions Studied by Internal Photoemission
复制标题
通过内部光电发射研究磷化镓/晶硅异质结中的能带不连续性
DOI：
--
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
H. Kawanami
中科院分区：
文献类型：
--
作者：
I. Sakata;H. Kawanami
用内光电子能谱(IPE)测量了采用固体源分子束外延技术制备的异质结(HJS)上磷化镓(GaP)的能带结构。结果表明，用ΔEc和ΔEV表示的导带不连续性和价带不连续性分别为0.0 9±0.0 1和1.0 5±0.0 1 eV。通过对具有不同GaP层厚度的样品的测量，我们明确了当前GaP-on-SiHJS的ΔEV不受垂直于生长方向的应变的影响。对GaP-On-SiHJS的ΔEc和ΔEV值与文献报道的GaP-On-SiHJS的Ec和EV值有很大不同，并简要讨论了这种差异的意义。
We measured the band lineup of gallium phosphide (GaP) on crystalline silicon (c-Si) heterojunctions (HJs) by using internal photoemission (IPE), where the heterojunctions were prepared by using solid-source molecular beam epitaxy. It was found that the conduction-band and valence-band discontinuities, denoted by ΔEc and ΔEv, are 0.09±0.01 and 1.05±0.01 eV, respectively. By performing measurements on samples with different GaP layer thicknesses, we clarified that ΔEv of the present GaP-on-Si HJs is not affected by strain normal to the growth direction. The values of ΔEc and ΔEv obtained for the GaP-on-Si HJs are significantly different from those reported for thin Si-on-GaP HJs, and the implications of this discrepancy are briefly discussed.