A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
复制标题
一种新型低关断损耗SOI横向绝缘栅双极晶体管，具有埋入式横向掺杂层
DOI：
10.1109/jeds.2018.2877765
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发表时间：
2019-01-01
影响因子：
2.3
通讯作者：
Yang, Ke-Meng
中科院分区：
文献类型：
--
作者：
Tian, Tao;Zhang, Sheng-Li;Yang, Ke-Meng
在本文中，我们提出了一种新型低关断损耗绝缘体上硅（SOI）横向绝缘栅双极晶体管（LIGBT），具有埋入变化的横向掺杂（VLD）层。所提出的器件在漂移区中插入了一个 VLD 层，与均匀 P 埋层 (UPB) SOI LIGBT 相比，增加了掺杂剂量 (<斜体>Q</斜体>) 和梯度 (<斜体>G</斜体>)。较大的 Q 值和较快的耗尽引起的较大电容效应导致阳极电压上升较低并减少漂移区的存储电荷。因此，可以获得相当低的关断损耗（<italic>E</italic><sub>off</sub>）。值得注意的是，由于新结构中电场的重塑，可以更快地去除漂移区的多余载流子。此外，VLD 层的较大 G 改善了击穿电压和关断损耗之间的权衡。二维仿真结果表明，该器件的<italic>E</italic><sub>off</sub>在100 A<inline-formula> <tex-math notation="LaTeX">$\cdot$ </tex-math></inline-formula>cm<sup>−2</sup>和200 A<inline-formula>时分别降低了29.4%和69.7%与 UPB SOI LIGBT 相比，分别为 <tex-math notation="LaTeX">$\cdot$ </tex-math></inline-formula>cm<sup>−2</sup>
In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (<italic>Q</italic>) and gradient (<italic>G</italic>) compared with Uniform P-buried (UPB) SOI LIGBT. The larger capacitance effect induced by lager <italic>Q</italic> and faster depletion leads to the lower rising anode voltage and reduced storage charge in the drift region. Therefore, a considerable low turn-off loss (<italic>E</italic><sub>off</sub>) can be obtained. It is worth to note that owing to reshaped electric field in the new structure, the excess carriers of the drift region could be removed more quickly. Furthermore, larger G of the VLD layer improves the tradeoff between breakdown voltage and turn-off loss. The results of 2-D simulation indicate that the <italic>E</italic><sub>off</sub> of the proposed device can reduce by 29.4% and 69.7% at 100 A<inline-formula> <tex-math notation="LaTeX">$\cdot$ </tex-math></inline-formula>cm<sup>−2</sup> and 200 A<inline-formula> <tex-math notation="LaTeX">$\cdot$ </tex-math></inline-formula>cm<sup>−2</sup>, respectively, when compared with UPB SOI LIGBT