High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique
High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique
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DOI：
10.1109/3.502380
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发表时间：
1996-06-01
影响因子：
2.5
通讯作者：
Wasilewski, ZR
中科院分区：
文献类型：
--
作者：
Liu, HC;Li, JM;Wasilewski, ZR
我们利用微波整流技术探索了量子阱红外光电探测器的高频性能。我们对屏障厚度从234到466埃、井数从4到32的各种装置进行了表征。我们的封装探测器具有相对平坦的频率响应，高达约30 GHz。实验结果表明，这些器件在高偏置场下的本征光导寿命在5 ~ 6 ps之间。
We explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique. We characterize a variety of devices with barrier thicknesses from 234 to 466 Angstrom and number of wells from 4 to 32. Our packaged detectors have a relatively flat frequency response up to about 30 GHz. These experiments indicate that the intrinsic photoconductive lifetime for these devices in the high-biasing field regime is in the range of 5-6 ps.