Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime
Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime
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过量载流子复合寿命涡流测量的实验室间研究
DOI:
10.1109/jphotov.2013.2284375
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发表时间:
2013
期刊:
影响因子:
--
通讯作者:
J. D. Murphy
中科院分区:
文献类型:
--
作者:
Adrienne L. Blum;J. S. Swirhun;R. Sinton;F. Yan;S. Herasimenka;T. Roth;K. Lauer;J. Haunschild;B. Lim;K. Bothe;Z. Hameiri;B. Seipel;R. Xiong;M. Dhamrin;J. D. Murphy
Excess-carrier recombination lifetime is a key parameter in silicon solar cell design and production. With the vast international use and recent standardization (SEMI PV13) of eddy-current wafer and brick silicon lifetime test instruments, it is important to quantify the inter- and intra-laboratory repeatability. This paper presents results of an international inter-laboratory study conducted with 24 participants to determine the precision of the SEMI PV13 eddy-current carrier lifetime measurement test method. Overall, the carrier recombination lifetime between-laboratory reproducibility was found to be within ±11% for quasi-steady-state (QSS) mode and ±8% for transient mode for wafer samples and within ±4% for bulk samples.