The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon
The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon
复制标题
晶格损伤和退火条件对硅中离子注入铋供体超精细结构的影响
DOI：
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发表时间：
2018
影响因子：
4.4
通讯作者：
S. Clowes
中科院分区：
文献类型：
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作者：
T. Peach;K. Homewood;M. Lourenço;M. Hughes;K. Saeedi;N. Stavrias;Juerong Li;S. Chick;B. Murdin;S. Clowes
本研究报告高能铋离子注入到硅中，特别强调退火条件对所观察到的Si：Bi施主态的超精细结构的影响。在已经在700 °C下退火的注入样品中观察到施主束缚激子Dox光致发光的抑制，这与在注入过程期间形成的晶格缺陷的致密层的存在有关。在10 K下的霍尔测量表明，这种注入损伤在低温下表现为丰富的p型电荷载流子，其密度被观察到对退火温度有很强的依赖性。使用共振D 0X光电导，我们能够识别在800 °C的最低温度下退火的样品中超精细结构的存在;然而，需要更高的温度来消除注入应变的影响。
This study reports on high energy bismuth ion implantation into silicon with a particular emphasis on the effect that annealing conditions have on the observed hyperfine structure of the Si:Bi donor state. A suppression of donor bound exciton, D0X, photoluminescence is observed in implanted samples which have been annealed at 700 °C relating to the presence of a dense layer of lattice defects that is formed during the implantation process. Hall measurments at 10 K show that this implant damage manifests itself at low temperatures as an abundance of p‐type charge carriers, the density of which is observed to have a strong dependence on annealing temperature. Using resonant D0X photoconductivity, we are able to identify the presence of a hyperfine structure in samples annealed at a minimum temperature of 800 °C; however, higher temperatures are required to eliminate effects of implantation strain.