Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond
Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond
复制标题
DOI：
10.1063/1.4819834
复制
发表时间：
2013-09-02
影响因子：
4
通讯作者：
Smith, Jason M.
中科院分区：
文献类型：
--
作者：
Grazioso, Fabio;Patton, Brian R.;Smith, Jason M.
我们介绍了一种方法，用于测量全应力张量在晶体中利用个别点缺陷的属性。通过测量立方晶体中具有C-3v对称性的三个点缺陷的电子态的微扰，获得了足够的信息来构造对称应力张量的所有六个独立分量。我们证明了该方法使用的光致发光从氮空位色心在金刚石。该方法打破了现有体应变测量技术固有的空间分辨率和灵敏度之间的反比关系，因此，提供了一种在金刚石和其他材料中进行纳米级应变映射的途径，其中可以询问单个点缺陷。(C)2013 AIP Publishing LLC.
We introduce a method for measuring the full stress tensor in a crystal utilising the properties of individual point defects. By measuring the perturbation to the electronic states of three point defects with C-3v symmetry in a cubic crystal, sufficient information is obtained to construct all six independent components of the symmetric stress tensor. We demonstrate the method using photoluminescence from nitrogen-vacancy colour centers in diamond. The method breaks the inverse relationship between spatial resolution and sensitivity that is inherent to existing bulk strain measurement techniques, and thus, offers a route to nanoscale strain mapping in diamond and other materials in which individual point defects can be interrogated. (C) 2013 AIP Publishing LLC.