W band power amplifier development for the Herschel HIFI instrument
W band power amplifier development for the Herschel HIFI instrument
复制标题
Herschel HIFI 乐器的 W 频段功率放大器开发
DOI：
10.1117/12.459192
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发表时间：
2003
影响因子：
4.3
通讯作者：
A. Campbell
中科院分区：
文献类型：
--
作者：
R. Ferber;T. Gaier;J. Pearson;L. Samoska;M. Wells;G. Swift;P. Yocom;Y. Chung;A. Campbell
本文总结了用于 Herschel HIFI（远红外外差仪器）仪器的本地振荡器 (LO) 链的 W 波段放大器的开发。介绍了放大器开发的关键问题及其解决方案，这些问题已应用于实现能够在 71 至 106 GHz 频率范围内产生 240 mW 或更大射频功率输出的稳定宽带放大器。 HIFI功率放大器设计实施例基于A-40硅铝合金封装，每个放大器中使用六个GaAs（砷化镓）HEMT（高电子迁移率晶体管）MMIC（单片微波集成电路）放大器芯片。解决的开发挑战包括：最初具有各种振荡或“调制”倾向（主要是带外）的 MMIC 芯片设计、信号分配器和组合器的开发以及整个频段的匹配、安装在放大器并行功率组合臂中的芯片特性的匹配、功率输出控制和均衡。介绍了所选的设计解决方案，包括放大器在低温下运行的器件、组件和材料选择。还显示了放大器的室温和低温（120 开尔文）数据。
This paper summarizes the development of W Band amplifiers for the Local Oscillator (LO) chains for the Herschel HIFI (Heterodyne Instrument for Far Infrared) Instrument. Key amplifier development issues and their solutions are presented, which have been applied on the way to realizing stable, wide-band amplifiers capable of producing 240 mW or greater RF power output across the 71 to 106 GHz frequency range. The HIFI power amplifier design embodiment is based on an A-40 silicon-aluminum alloy package with six GaAs(Gallium Arsenide) HEMT(High Electron Mobility Transistors) MMIC(Monolithic Microwave Integrated Circuit) amplifier chips used in each amplifier. Development challenges addressed include: MMIC chip designs which initially had a variety of oscillation or "moding" propensities (mostly out-fo-band), signal splitter and combiner development and matching across the band, matching of chip characteristics for those chips installed in the parallel power combined arms of the amplifier, power output control and leveling. The chosen design solutions are presented, including device, component and material selection for amplifier operation at cryogenic temperatures. Room temperature and cryogenic (120 Kelvin) data is also shown for the amplifier.