Quantum Hall transport as a probe of capacitance profile at graphene edges
Quantum Hall transport as a probe of capacitance profile at graphene edges
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DOI：
10.1063/1.4773589
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发表时间：
2013-01-07
影响因子：
4
通讯作者：
van Wees, B. J.
中科院分区：
文献类型：
--
作者：
Vera-Marun, I. J.;Zomer, P. J.;van Wees, B. J.
量子霍尔效应是二维电子气中量子化输运的显著表现。考虑到它的技术相关性，理解它在现实纳米设备中的发展是很重要的。在这项工作中，我们介绍了场效应器件中不同边缘通道的外观是如何受到样品边缘附近存在的非均匀电容分布的影响的，这是一个与石墨烯特别相关的条件。我们将这个实用的想法应用到高质量石墨烯的实验中，展示了量子霍尔输运作为空间分辨探测器的潜力，该探测器可以探测这种二维电子气边缘附近的密度分布。(C)2013年美国物理研究所。[http://dx.doi.org/10.1063/1.4773589]
The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas (2DEG). Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work, we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773589]