Improving the Third Quadrant Operation of Superjunction MOSFETs by Using the Cascode Configuration
Improving the Third Quadrant Operation of Superjunction MOSFETs by Using the Cascode Configuration
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DOI：
10.1109/tpel.2018.2837747
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发表时间：
2019-03
影响因子：
6.7
通讯作者：
Juan Rodríguez;D. G. Lamar;J. Roig;Alberto Rodríguez;F. Bauwens
中科院分区：
文献类型：
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作者：
Juan Rodríguez;D. G. Lamar;J. Roig;Alberto Rodríguez;F. Bauwens
本文通过分析模型和实验数据，深入研究了高压超结mosfet （SJ-FET）与低压硅mosfet在级联码结构（CC）下的第三象限行为。通过评估sj - cc的反向恢复时间（tRR）、反向恢复峰值电流（IRRM）和反向恢复电荷（QRR），将sj - cc的第三象限动态行为与独立的sj - cc进行比较。分析模型和实验结果表明，SJ-CC可避免或减轻SJ-FET体二极管在第三象限工作时的激活。因此，SJ-CC大大提高了广泛使用的性能因数RON·QRR，它考虑了晶体管的导通电阻（RON）。此外，使用SJ-CC获得的结果与反向恢复增强的sj - fet（即辐照sj - fet）获得的结果相似或更好。本文还与商用宽带隙开关进行了比较，得出的结论是，SJ-CC提供的RON·QRR值比商用GaN级联码高约8倍。
In this paper, the third quadrant behavior of a high-voltage superjunction mosfet (SJ-FET) in cascode configuration (CC) with a low-voltage silicon mosfet is deeply studied by means of an analytical model and experimental data. The third quadrant dynamic behavior of the SJ-CCs is compared to the standalone counterparts by evaluating their reverse recovery time (tRR), reverse recovery peak current (IRRM), and reverse recovery charge (QRR). An analytical model and experimental results show that the SJ-CC avoids or mitigates the activation of the SJ-FET body diode during the third quadrant operation. As a consequence, the SJ-CC strongly improves the widely used figure-of-merit RON·QRR, which considers the on-state resistance of the transistors (RON). In addition, the results obtained using an SJ-CC are similar or better than those achieved by SJ-FETs with enhanced reverse recovery (i.e., irradiated SJ-FETs). This paper also includes a comparison with commercial wide bandgap switches, concluding that the RON·QRR value provided by the SJ-CC is around eight times higher than that provided by a commercial GaN cascode.