High-Power AlGaInAs Mode-Locked DBR Laser With Integrated Tapered Optical Amplifier
High-Power AlGaInAs Mode-Locked DBR Laser With Integrated Tapered Optical Amplifier
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DOI：
10.1109/lpt.2012.2231858
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发表时间：
2013-02
影响因子：
2.6
通讯作者：
J. Akbar;L. Hou;M. Haji;M. Strain;J. Marsh;A. C. Bryce;A. Kelly
中科院分区：
文献类型：
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作者：
J. Akbar;L. Hou;M. Haji;M. Strain;J. Marsh;A. C. Bryce;A. Kelly
我们展示了一种高输出功率被动锁模分布式布拉格反射镜激光器，带有集成锥形半导体光放大器，工作波长为1.5 μm。这些器件是基于优化的低光约束AlGaInAs/InP外延材料与三个量子威尔斯有源区和无源远场减少层。该器件产生的最小脉冲持续时间为4.3 ps，在40 GHz的重复率几乎变换限制的脉冲。平均输出功率为200 mW，对应的输出峰值功率> 1.2 W。
We demonstrate a high output power passively mode-locked distributed Bragg reflector laser with integrated tapered semiconductor optical amplifier, operating at 1.5 μm. These devices are based on an optimized low-optical-confinement AlGaInAs/InP epitaxial material with a three quantum wells active region and a passive far-field reduction layer. The device generates nearly transform-limited pulses with minimum pulse duration of 4.3 ps at 40-GHz repetition rate. An average output power of 200 mW with a corresponding output peak power of >;1.2 W is achieved.