Residual strain around a step edge of artificial Al∕Si(111)-7×7 nanocluster
Residual strain around a step edge of artificial Al∕Si(111)-7×7 nanocluster
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DOI：
10.1063/1.2130722
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发表时间：
2005-11
影响因子：
4
通讯作者：
Zhanwei Liu;H. Xie;D. Fang;F. Dai;Q. Xue;Hong Liu;J. Jia
中科院分区：
文献类型：
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作者：
Zhanwei Liu;H. Xie;D. Fang;F. Dai;Q. Xue;Hong Liu;J. Jia
在采用表面介导聚类技术制备人工Al / Si(111)-7×7纳米簇的过程中，由于Al原子与Si原子之间的引力相互作用增强，原本具有原子直边的步骤变得弯曲和不规则。采用数字几何相位技术研究了台阶边缘附近的表面残余应变。结果表明：残余应变为压应变，上下台阶边缘附近均存在较大的压应力；
During artificial Al∕Si(111)-7×7 nanocluster fabrication by using surface-mediated clustering, original step with an atomically straight edge becomes curved and irregular because of stronger attractive interaction between Al atoms and Si atoms. Surface residual strain around step edges has been studied by using digital geometric phase technique. The results show that the residual strain is compressive and there is larger compressive stress near both of the up and down step edges.