Nanofabrication of spin-transfer torque devices by a polymethylmethacrylate mask one step process: Giant magnetoresistance versus single layer devices
Nanofabrication of spin-transfer torque devices by a polymethylmethacrylate mask one step process: Giant magnetoresistance versus single layer devices
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通过聚甲基丙烯酸甲酯掩模一步工艺纳米制造自旋转移力矩器件：巨磁阻与单层器件
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
M. Munzenberg
中科院分区：
文献类型：
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作者：
A. Parge;T. Niermann;M. Seibt;M. Munzenberg
提出了一种用光刻工艺一步制备低电阻率磁性自旋力矩器件的方法。柱装置的质量被证明为一个标准的磁性双层装置。对于单层器件，我们发现滞后开关和更复杂的动态激发模式在更高的领域。一个简单的模型来解释电阻尖峰。
We present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presented.