Tailoring the Height of Ultrathin PbS Nanosheets and Their Application as Field-Effect Transistors
Tailoring the Height of Ultrathin PbS Nanosheets and Their Application as Field-Effect Transistors
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DOI:
10.1002/smll.201402144
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发表时间:
2015-02-18
期刊:
影响因子:
13.3
通讯作者:
Klinke, Christian
中科院分区:
文献类型:
--
作者:
Bielewicz, Thomas;Dogan, Sedat;Klinke, Christian
Two-dimensional, solution-processable semiconductor materials are anticipated to be used in low-cost electronic applications, such as transistors and solar cells. Here, lead sulfide nanosheets with a lateral size of several micrometers are synthesized and it is shown how their height can be tuned by the variation of the ligand concentrations. As a consequence of the adjustability of the nanosheets' height between 4 to more than 20 nm charge carriers are in confinement, which has a decisive impact on their electronic properties. This is demonstrated by their use as conduction channel in a field-effect transistor. The experiments show that the performance in terms of current, On/Off ratio, and sub-threshold swing is tunable over a large range.